Effects of ion implantation on crystallization of amorphous CoSi₂

Abstract

The effects of Si and Kr ion implantation on the crystallization kinetics of amorphous CoSi2 have been investigate by differential scanning calorimetry and in situ sheet resistance measurement. Without ion implantation, the crystallization of coevaporated CoSi2 is characterized by three dimensional growth from preexisting nuclei. When the as-deposited CoSi2 is implanted with Si or Kr ions at liquid nitrogen temperature, the kinetics of the subsequent crystallization is significantly altered. A 180 keV 5×1015 cm-2 Si ion implantation increases the crystallization temperature by 34°C. When the Si dose is below 1×1015 cm-2, ion implantation causes a sharp decrease in the crystallization kinetic parameter defined by the Avrami equation. The amount of decrease is shown to scale with the deposited nuclear energy. At higher doses, the kinetic parameter continues to decrease with increasing dose but at a much reduced rate.