Ehud Altman, Kenneth R. Brown, et al.
PRX Quantum
In this work we study the growth of SiGe/Si superlattices and thick SiGe layers on ( 1 00), ( 1 1 1 ),and ( 1 1 0) Si surfaces at various temperatures by molecular-beam epitaxy (MBE) . We find that these three growth directions give rise to different growth morphologies and defect structures. The best growth is achieved on (100) surfaces, since growth on ( 1 1 1 ) and ( 1 1 0) surfaces are much more susceptible to twin formation. The growth direction, together with growth temperature, also dictates the onset of long-range ordering in SiGe layers. Our results indicate that ordering occurs only in thick, partially-relaxed SiGe layers grown on (100) surfaces at low temperatures but not in strained-layer superlattices grown under identical conditions. Thick SiGe layers or strained-layer superlattices grown on (1 1 1) or (1 10) surfaces at high or low temperatures do not exhibit ordering.
Ehud Altman, Kenneth R. Brown, et al.
PRX Quantum
R.B. Morris, Y. Tsuji, et al.
International Journal for Numerical Methods in Engineering
Imran Nasim, Michael E. Henderson
Mathematics
T.S. Kuan, J. Freeouf, et al.
Journal of Applied Physics