Publication
Applied Physics Letters
Paper

Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As

View publication

Abstract

The recombination (electron capture) kinetics of the ionized DX center in AlxGa1-xAs have been measured as a function of temperature and silicon doping concentration. It is shown that for x≅0.35, the silicon concentration dependence of the recombination kinetics is dominated by effects of the electron distribution in the conduction band, and is insensitive to changes in the trap characteristics. In a model kinetic calculation consistent with the data the trap is found to capture through a level 0.202 eV from the bottom of the conduction band with a width of 0.045 eV, independent of DX center concentration.

Date

Publication

Applied Physics Letters

Authors

Share