S. Tiwari, M.V. Fischetti, et al.
IEDM 1997
The recombination (electron capture) kinetics of the ionized DX center in AlxGa1-xAs have been measured as a function of temperature and silicon doping concentration. It is shown that for x≅0.35, the silicon concentration dependence of the recombination kinetics is dominated by effects of the electron distribution in the conduction band, and is insensitive to changes in the trap characteristics. In a model kinetic calculation consistent with the data the trap is found to capture through a level 0.202 eV from the bottom of the conduction band with a width of 0.045 eV, independent of DX center concentration.
S. Tiwari, M.V. Fischetti, et al.
IEDM 1997
P. Solomon, S.L. Wright
IEEE T-ED
K. Rim, J.O. Chu, et al.
VLSI Technology 2002
M.I. Nathan, P.M. Mooney, et al.
Surface Science