Conference paper
Magnetoresistive Random Access Memory (MRAM) and reliability
Brian Hughes
IRPS 2004
We report on an experimental investigation of spin-orbit torque (SOT) in W(O)|CoFeB heterostructures where a thin insertion layer with negligible spin-orbit coupling is inserted at the W(O)|CoFeB interface. The SOT is found to be suppressed with the addition of the insertion layer, contrary to estimates using the transparency formalism. In addition, the SOT, as quantified by the spin Hall angle remains constant at -50% for W(O) thicknesses down to 2 nm. Our data is thus consistent with an interfacial SOT mechanism in the W(O)|CoFeB system.
Brian Hughes
IRPS 2004
Jie Zhang, Chirag Garg, et al.
Nano Letters
Luc Thomas, See-Hun Yang, et al.
IEDM 2011
Brian Hughes
IRPS 2004