Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
We have studied the effect of hydrogen in the CoSi2/Si(100) interface on the Schottky-barrier height of CoSi2 on n-type and p-type Si(100). It was found that hydrogenation results in an increase of 120 meV in the barrier height to n-type Si(100). Measurements of the hydrogen concentration in the interface, using quantitative ion-beam techniques, were used to establish the correlation between the change in barrier height and hydrogen concentration; other hydrogen effects such as passivation of shallow donor and acceptor impurities in silicon were ruled out. The results demonstrate that 8×1015 hydrogen atoms/cm2 can alter an interface layer and thereby change the pinning position of the Fermi level. © 1994 The American Physical Society.
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
T.N. Morgan
Semiconductor Science and Technology
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS