Effect of dopant on reaction between polycrystalline silicon and thin-film rhodium

Abstract

High phosphorus doping (6.0 × 1020 atom/cm 3) of polycrystalline silicon has been found to change the first rhodium silicide formation from the monosilicide (RhSi) to a metal-rich silicide (Rh2Si) which has twice the conductivity of the former. The methods of specimen analysis and characterization utilized in this study are Rutherford backscattering spectrometry, Seemann Bohlin x-ray diffraction, sheet resistance, and resistivity measurement via four-point probe.