B.A. Scott, R.M. Plecenik, et al.
Inorganic Chemistry
Resistance changes associated with precipitation in AlSingle Bond signCu thin films were monitored during power annealing at current densities up to 4×106 A/cm2 and temperatures of ∼178 and 200°C. The rate of change of resistance decreased as the current increased. It is argued that this decrease is due to the current inhibiting the precipitation of θ Al2Cu. © 1972 The American Institute of Physics.
B.A. Scott, R.M. Plecenik, et al.
Inorganic Chemistry
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VLSI Technology 1985
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Applied Physics Letters
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Physical Review B