Effect of direct current on precipitation in quenched Al + 4% Cu thin films

Abstract

Resistance changes associated with precipitation in AlSingle Bond signCu thin films were monitored during power annealing at current densities up to 4×106 A/cm2 and temperatures of ∼178 and 200°C. The rate of change of resistance decreased as the current increased. It is argued that this decrease is due to the current inhibiting the precipitation of θ Al2Cu. © 1972 The American Institute of Physics.