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Publication
Applied Physics Letters
Paper
Drain voltage scaling in carbon nanotube transistors
Abstract
The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.