Doping in strained (Si)/(Ge) superlattices

Abstract

We present a comparative study of the pseudomorphic (Si)6/(Ge)6 and -doped (Si)3(Sb)(Si)2/(Ge)6 superlattices using the self-consistent pseudopotential method. The strained (Si)6/(Ge)6 superlattice has the lowest conduction-band states of extended character, and the difference of energy between the direct and indirect band gap is 70 meV. Upon doping by Sb in the Si sublattice, a quasi-two-dimensional band confined to the Sb layer dips into the band gap. Furthermore, the average potential in the Ge sublattice rises relative to that of the Si side, which increases the band offset, and enhances the localization of the quantum well states. These results indicate that doping provides new means for controlling the electronic properties of strained superlattices. © 1988 The American Physical Society.