Dopant Diffusion in Self-Aligned Silicide/Silicon Structures

Abstract

Modern microelectronic devices employ transition metal silicides in self-aligned structures on highly doped silicon material. Thermal treatments during or following silicide formation can significantly alter the dopant concentration in the underlying silicon layer. This paper discusses various diffusion mechanisms in self-aligned silicide structures and their effect on device performance. © 1988, The Electrochemical Society, Inc. All rights reserved.