F.M. Ross, J. Tersoff, et al.
Microscopy Research and Technique
CoSi2 islands grown epitaxially on Si are investigated based on dislocation networks observed in these islands. The results are compared with dislocation-dynamics calculations which make use of the phenomenon that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions. It is shown that agreement in the results can be achieved, demonstrating that this approach can be used to study dislocations in other mesostructures.
F.M. Ross, J. Tersoff, et al.
Microscopy Research and Technique
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
K.W. Schwarz, Jerry Tersoff
Nano Letters
H. Tang, K.W. Schwarz, et al.
Acta Materialia