Lawrence Suchow, Norman R. Stemple
JES
Direct high-resolution photoetching of various resists and polymers has been demonstrated using an ArF excimer laser at 193 nm. Features as small as 0.3 μm have been produced in 1 μm thick films with no subsequent wet processing steps necessary. © 1984 Springer-Verlag.
Lawrence Suchow, Norman R. Stemple
JES
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SPIE AeroSense 1997
Peter J. Price
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