K.C. Pandey, Sudhanshu S. Jha, et al.
Physical Review Letters
We present a novel concerted exchange mechanism for the diffusion of substitutional atoms in semiconductors that does not involve any defects. For self-diffusion in Si we show that this mechanism is energetically favorable and is able to account for a number of experimental observations. Implication for the diffusion of substitutional dopants is discussed. © 1986 The American Physical Society.
K.C. Pandey, Sudhanshu S. Jha, et al.
Physical Review Letters
E. Kaxiras, Y. Bar-Yam, et al.
Physical Review B
K.C. Pandey
Physical Review Letters
Peter J. Feibelman, E.J. McGuire, et al.
Physical Review B