Publication
Journal of Applied Physics
Paper

Diffusion of zinc in gallium arsenide: A new model

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Abstract

Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.

Date

01 Dec 1981

Publication

Journal of Applied Physics

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