E. Pehlke, J. Tersoff
Physical Review Letters
We examine individual Si nanowires grown by the vapor-liquid-solid mechanism, using real-time in situ ultra high vacuum transmission electron microscopy. By directly observing Au-catalyzed growth of Si wires from disilane, we show that the growth rate is independent of wire diameter, contrary to the expected behavior. Our measurements show that the unique rate-limiting step here is the irreversible, kinetically limited, dissociative adsorption of disilane directly on the catalyst surface. We also identify a novel dependence of growth rate on wire taper. © 2006 The American Physical Society.
E. Pehlke, J. Tersoff
Physical Review Letters
C. Krontiras, L. Grönberg, et al.
Thin Solid Films
F.M. Ross, C.-Y. Wen, et al.
Philosophical Magazine
D.S. Franzblau, J. Tersoff
Physical Review Letters