J.B. Hannon, J. Tersoff, et al.
Physical Review Letters
We examine individual Si nanowires grown by the vapor-liquid-solid mechanism, using real-time in situ ultra high vacuum transmission electron microscopy. By directly observing Au-catalyzed growth of Si wires from disilane, we show that the growth rate is independent of wire diameter, contrary to the expected behavior. Our measurements show that the unique rate-limiting step here is the irreversible, kinetically limited, dissociative adsorption of disilane directly on the catalyst surface. We also identify a novel dependence of growth rate on wire taper. © 2006 The American Physical Society.
J.B. Hannon, J. Tersoff, et al.
Physical Review Letters
F.M. Ross, J. Tersoff, et al.
Physical Review Letters
J. Tersoff
ICPS Physics of Semiconductors 1984
J. Tersoff
Physical Review B