François Léonard, J. Tersoff
Applied Physics Letters
We examine individual Si nanowires grown by the vapor-liquid-solid mechanism, using real-time in situ ultra high vacuum transmission electron microscopy. By directly observing Au-catalyzed growth of Si wires from disilane, we show that the growth rate is independent of wire diameter, contrary to the expected behavior. Our measurements show that the unique rate-limiting step here is the irreversible, kinetically limited, dissociative adsorption of disilane directly on the catalyst surface. We also identify a novel dependence of growth rate on wire taper. © 2006 The American Physical Society.
François Léonard, J. Tersoff
Applied Physics Letters
J. Tersoff
Physical Review Letters
S. Kodambaka, J.B. Hannon, et al.
M&M 2006
B.J. Spencer, J. Tersoff
Applied Physics Letters