Publication
Journal of Physics C: Solid State Physics
Paper

Deviations from the one-defect approximation: Antistructure in III-V compounds

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Abstract

In III-V semiconductors a common mode of vacancy migration is by nearest-neighbour hopping. In the presence of Zn diffusion this mode is greatly enhanced. A consequence is the production of antisite defects, which usually become antistructure pairs as the vacancy returns to its original sublattice. Many important deep-level defects involve vacancies during their creation. One should expect to find neutral antistructure pairs in the vicinity of Zn-O luminescence centres, EL2 defects, etc. Much of the mystery of these centres can be attributed to the dipolar interaction of these antistructure pairs with the nominal defects.

Date

24 Nov 2000

Publication

Journal of Physics C: Solid State Physics

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