Determination of the surface conductivity of ultrathin metallic films on Si(111) by high-resolution electron-energy-loss spectroscopy

Temperature-dependent (20-300 K) electron-energy-loss measurements of the quasielastic peak for 2.5-10 of evaporated Au and Pd on Si(111) are presented, which, together with a theory of the electron scattering from metallic layers, permit the determination of dc conductivities. Metallic films, 10 thick, are found to have large temperature-independent resistivities dominated by surface scattering and imperfections. An unusual temperature-dependent resistivity is found for Pd on Si which is suggested to arise from a phase transition near the interface. © 1985 The American Physical Society.