TSV multi-signal connection compact modeling
Essam Mina, Shlomo Shlafman, et al.
COMCAS 2013
This paper presents a design and modeling methodology of vertical interconnects for three-dimensional integration (3DI) applications. Compact semi-analytical wideband circuit level models have been developed based on explicit expressions. The pronounced frequency dependent silicon substrate induced dispersion and loss effects are considered, as well as skin and proximity effects. The models have been verified against numerical computations (full wave HFSS and quasi-static Q3D solvers). A dedicated test site has been designed for broadband characterization (from 1 MHz up to 110 GHz) of TSVs within a dense farm. © 2011-2012 IEEE.
Essam Mina, Shlomo Shlafman, et al.
COMCAS 2013
Avraham Sayag, Dan Ritter, et al.
IEEE T-MTT
Rachel Gordin, David Goren
IEEE-SPI 2004
David Goren, Michael Zelikson, et al.
DATE 2002