P.C. Pattnaik, D.M. Newns
Physical Review B
Electrical breakdown in GaAs Schottky diodes creates a granular filamentary structure of submicron dimensions between the contacts. The filament exhibits very fast (<2 nsec) electrical switching between stable resistance states. Irrespective of the contact metal, the filament becomes superconducting when in the low-resistance state. Electron transport in all the resistance states is intergrain tunneling between metallic inclusions and is governed by an activation energy. Switching is not based on metal transport. © 1975.
P.C. Pattnaik, D.M. Newns
Physical Review B
Michiel Sprik
Journal of Physics Condensed Matter
R.W. Gammon, E. Courtens, et al.
Physical Review B
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT