E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Heteroepitaxial growth of the Co-Cu system is investigated by scanning tunneling microscopy. Cu deposited on Co/Cu(001) decorates the step edges of Co islands and forms nanometer-sized rings. Subsequent deposition of Co transforms the film morphology from compact to heterogeneously intermixed. We relate this growth asymmetry to the largely different surface free energies of Co and Cu, which impose a diffusion barrier at Co-Cu boundaries, and to atomic exchange processes that occur in the presence of Co adatom gas. © 1997 Elsevier Science B.V.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
T.N. Morgan
Semiconductor Science and Technology
Frank Stem
C R C Critical Reviews in Solid State Sciences
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering