About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Advances in Semiconductors and Semiconductor Structures 1987
Conference paper
Cross-talk and transit-time effects in stroboscopic voltage measurements via electron emission
Abstract
The dependence on geometry, extraction field, electron start energy, and rise time of the input signal is investigated for the transit-time and cross-talk effects in stroboscopic voltage measurements via electron emission. The investigation yields information about the best achievable time resolution and the disturbance of measured signals by signals on neighboring conductors in corresponding contactless voltage-measuring techniques like photoemission sampling and electron-beam sampling.