Cross-sectioning of layered thin films by ultramicrotomy

A.F. Marshall; D.C. Dobbertin

doi:10.1016/0304-3991(86)90008-2

Ultramicroscopy

Paper

01 Jan 1986

Cross-sectioning of layered thin films by ultramicrotomy

View publication

Abstract

Ultramicrotomy is shown to be a valuable technique for observing thin films in cross-section. The structure of layered Co-Tb and Mo-Ge films are characterized, with layers as thin as 0.9 nm resolved in the latter. © 1986.

Conference paper

Various Properties of sputtered Ta_xAl_t-x films

V.J. Minkiewicz, J.O. Moore, et al.

MRS Fall Meeting 1993

Paper

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

D.B. Aubertine, M.A. Mander, et al.

Journal of Applied Physics

Paper

Giant magnetoresistance at low fields in [(Ni_xFe _1-x)_yAg_1-y]/Ag multilayers prepared by molecular-beam epitaxy

R.F.C. Farrow, R.F. Marks, et al.

Journal of Applied Physics

Paper

The role of ion-beam cleaning in the growth of strained-layer enitaxial thin transition metal films

A.F. Marshall, R.H. Hammond, et al.

Journal of Materials Research

View all publications

Abstract

Related

Various Properties of sputtered TaxAlt-x films

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

Giant magnetoresistance at low fields in [(NixFe 1-x)yAg1-y]/Ag multilayers prepared by molecular-beam epitaxy

The role of ion-beam cleaning in the growth of strained-layer enitaxial thin transition metal films

Various Properties of sputtered Ta_xAl_t-x films

Giant magnetoresistance at low fields in [(Ni_xFe _1-x)_yAg_1-y]/Ag multilayers prepared by molecular-beam epitaxy