Publication
JVSTA
Paper

Correlation between the ion bombardment during film growth of Pd films and their structural and electrical properties

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Abstract

Pd films were produced in a long mean free path dc triode system using Kr as sputter gas (PKr = 1 mTorr) and with simultaneous ion bombardment of the growing Pd film. The resulting film properties are related to the energy En delivered by the bombarding Kr ions to the growing film per arriving sputtered Pd atom. Systematic changes of the Kr concentration, the lattice parameter, strain, grain size, preferential orientation, and residual resistivity are observed as a function of En. Analysis of the data suggests that, in addition to a possible direct influence of the incorporated Kr, defects produced by the ion bombardment are causing these property changes. This is confirmed by preliminary TEM results revealing a high density of dislocations. © 1983, American Vacuum Society. All rights reserved.

Date

01 Jan 1983

Publication

JVSTA

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