P. Alnot, D.J. Auerbach, et al.
Surface Science
We calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples. When the sample length is much smaller than the mean free path the current density is proportional to the applied voltage so that the apparent low field mobility is proportional to the device length. Calculation of the apparent low field mobility for high mobility GaAs devices shows that the size effects may be important for sample lengths smaller than 2 μm. © 1981.
P. Alnot, D.J. Auerbach, et al.
Surface Science
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992