A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Vacancy jumps in a bicrystal model of Σ = 5 (36.9°) [001] tilt boundary in aluminum have been observed at temperatures between 700 and 800 K by means of molecular dynamics simulation. Preliminary results indicated considerable structure dependence and yielded an activation energy for vacancy migration of 0.38 eV. In contrast to a previous study of vacancy migration in a bcc tilt boundary, thermal activation of a boundary interstitial by Frenkel pair production was not observed. © 1984.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
K.N. Tu
Materials Science and Engineering: A
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials