Assembly technology for three dimensional integrated circuits
A. Topol, D.C. La Tulipe, et al.
VMIC 2005
Volterra edge dislocations were introduced in an amorphous Lennard-Jones model. By application of suitable boundary conditions, equivalent to a shear stress, a recognizable step with a shape of a double-headed asymptote was formed on the other side of the amorphous solid. This suggests that atomic transport via dislocation motion can occur and could be the mechanism of shear-band formation in real amorphous materials. © 1983 The American Physical Society.
A. Topol, D.C. La Tulipe, et al.
VMIC 2005
J. Doyle, P. Chaudhari, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
P. Chaudhari, E. Sarnelli, et al.
Physical Review B
P. Chaudhari, Paul J. Steinhardt
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties