A. Grill, V.V. Patel, et al.
MRS Proceedings 2002
The degree of Si alloying in vertically aligned self-assembled Ge islands increases with the number of stacked layers. We find that the Si-Ge interdiffusion coefficient increases by more than two orders of magnitude for stacked hut clusters. Furthermore, we determine the composition profiles through the center of dome-shaped islands, capped with Si. These profiles exhibit a plateau near the base and a Ge enrichment near the apex of the islands. In this case, too, the upper dome island experiences a state of increased alloying with Si. © 2002 American Institute of Physics.
A. Grill, V.V. Patel, et al.
MRS Proceedings 2002
J. Cai, P.M. Mooney, et al.
Journal of Applied Physics
M. Stoffel, A. Rastelli, et al.
Physical Review B - CMMP
J. Cai, P.M. Mooney, et al.
MRS Proceedings 2004