J. Tersoff
Applied Surface Science
The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN0. 67. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen-borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride. © 1990, American Vacuum Society. All rights reserved.
J. Tersoff
Applied Surface Science
Peter J. Price
Surface Science
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials