Compact modeling and comparative analysis of silicon-chip slow-wave transmission lines with slotted bottom metal ground planes

Abstract

A compact modeling approach for silicon-chip slow-wave transmission lines with slotted bottom metal ground planes is studied and its limitations are presented. The modeling approach facilitates the calculation of the slow-wave transmission line parameters based upon the corresponding coplanar and grounded coplanar transmission-line parameters. The described analysis method is used for a comparative study of the slow-wave structures versus their coplanar and grounded coplanar reference structures. Floating bottom shield slow-wave transmission lines are then compared with their grounded bottom shield counterparts. The theoretical results are supported by electromagnetic simulations and by measurements up to 30 and 50 GHz. © 2006 IEEE.