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PaperOccupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxyD.N. McIlroy, D. Heskett, et al.Physical Review B
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PaperSurface core-level shifts for the (110) cleavage face of III-V semiconductors: InAs(110)A.B. McLeanJournal of Physics Condensed Matter
