L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
In a recent Rapid Communication [Phys. Rev. B 35, 6468 (1987)], Munifoz, Sanchez-Dehesa, and Flores presented a self-consistent tight-binding analysis of valence-band offsets in GaAs/AlAs and CdTe/HgTe, and found a sizable dependence upon interface orientation for the latter system. This result differs from that obtained by the present authors for CdTe/HgTe heterojunctions. A more general study, building upon our previous heterojunction calculations, indicates in fact that independence of interface orientation is a general characteristic of a wide class of nonpolar interfaces. © 1988 The American Physical Society.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011