Chemical Vapor Deposited Copper from Alkyne Stabilized Copper (I) Hexafluoroacetylacetonate Complexes

Abstract

High-purity copper films were deposited at substrate temperatures between 150 and 225°C via pyrolytic decomposition of a series of alkyne stabilized copper(I) hexafluoroacetylacetonate complexes. The copper-alkyne complexes display varying chemical and physical properties which are dependent upon the identity of the alkyne species used to stabilize the reactive copper(I) moiety. The relationship of precursor structure towards the observed partial pressure and film growth rate are highlighted under transport-limited reactor conditions. The use of these alkyne-copper complexes for forming conformal copper films at low substrate temperatures and with rapid deposition rates is reported. © 1993, The Electrochemical Society, Inc. All rights reserved.