Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R. Ghez, M.B. Small
JES
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Frank Stem
C R C Critical Reviews in Solid State Sciences