Peter J. Price
Surface Science
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Peter J. Price
Surface Science
T. Schneider, E. Stoll
Physical Review B
J.A. Barker, D. Henderson, et al.
Molecular Physics
John G. Long, Peter C. Searson, et al.
JES