Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Julien Autebert, Aditya Kashyap, et al.
Langmuir
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics