F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Gangulee, F.M. D'Heurle
Thin Solid Films
T.N. Morgan
Semiconductor Science and Technology