About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Chemical Physics Letters
Paper
Charge injection and recombination at the metal-organic interface
Abstract
We consider the mechanism of charge injection from metals into amorphous organic semiconductors. By first treating charge recombination at the interface as a hopping process in the image potential, we obtain an expression for the surface recombination rate. The principle of detailed balance is then used to determine the injection current. This simple approach yields the effective Richardson constant for injection from metal to organic, and provides a means to derive the electric field dependence of thermionic injection. The result for the net current, injected minus recombination, is in agreement with a more exact treatment of the drift-diffusion equation.