A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The third-order nonlinear susceptibility X(3) normalized to the absorption coefficient a displays a dramatic drop at 0.4 eV above the S0-S1 transition in polythiophene derivatives. Steady-state photoconductivity data show the intrinsic photocrent starting exactly where the decrease in X(3)/α is seen. These results point to a change from bound excitons to free-electron hole pairs at 0.4 eV above the S0-S1 transition, and support the description of such disordered conjugated polymers using a molecular approach rather than as infinite one-dimensional semiconductors.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals