J.M.E. Harper, S.E. Harnstram, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We have investigated reactively sputtered films of RuO2 for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10-9 dyn cm -2 range. The resistivity of as deposited films is 40 μΩ cm. The films are excellent barriers against interdiffusion of Si and Al.
J.M.E. Harper, S.E. Harnstram, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
L. Krusin-Elbaum, L. Civale, et al.
Physical Review Letters
L. Krusin-Elbaum, T. Shibauchi, et al.
Physica C: Superconductivity and its Applications
L. Civale, L. Krusin-Elbaum, et al.
Physical Review B