Chin-An Chang, C.C. Tsuei, et al.
Applied Physics Letters
We have investigated reactively sputtered films of RuO2 for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10-9 dyn cm -2 range. The resistivity of as deposited films is 40 μΩ cm. The films are excellent barriers against interdiffusion of Si and Al.
Chin-An Chang, C.C. Tsuei, et al.
Applied Physics Letters
D. Niebieskikwiat, A. Silhanek, et al.
Physical Review B - CMMP
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983
C.C. Chi, L. Krusin-Elbaum, et al.
Physica B+C