Publication
Applied Physics Letters
Paper

Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization

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Abstract

We have investigated reactively sputtered films of RuO2 for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10-9 dyn cm -2 range. The resistivity of as deposited films is 40 μΩ cm. The films are excellent barriers against interdiffusion of Si and Al.

Date

01 Dec 1987

Publication

Applied Physics Letters

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