About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IRPS 2003
Conference paper
Characterization of light emission from SiGe heterojunction bipolar transistor for photon emission microscopy applications
Abstract
Light emission from SiGe heterojunction bipolar transistor (HBT) was characterized for photon emission microscopy applications. Radiative recombination dominates in non-saturation regime. It increases in saturation regime due to increased concentration of minority charge carriers in the base. Hot electron radiation dominates in avalanche and is suppressed at large collector currents due to base widening.