Characterization of electron trapping defects on silicon by scanning tunneling microscopy

Abstract

We have used scanning tunneling microscopy to locate and characterize electron trapping defects on in-situ oxidized Si(100) surfaces. When the tunneling tip is held stationary over a trap, the tunnel current switches between two well defined values. By changing the voltage on the tip we can establish the location of the trap in the tunneling direction and the trapping energies. © 1987.