Channel and contact length scaling in carbon nanotube transistors

Abstract

In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized source/drain contact lengths (CL). Until recently, many believed that Lg could not be scaled in SWCNT field-effect transistors (CNTFETs) without incurring severe short channel effects (SCEs). However, using an improved device geometry, it has now been shown that proper Lg scaling can be achieved with actual enhancement in performance [1]. In this presentation, a more complete picture of Lg scaling is given, along with the first reported results of contact length scaling. © 2010 IEEE.