Publication
Applied Physics Letters
Paper

Carrier lifetime versus ion-implantation dose in silicon on sapphire

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Abstract

We have measured the dependence of the free-carrier lifetime on O + ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm -2 the measured carrier lifetime reached a limit of 600 fs.

Date

01 Dec 1987

Publication

Applied Physics Letters

Authors

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