BSIM_plus: An Advanced SPICE Model for Submicron MOS VLSI Circuits

Abstract

The BSIM_plus MOS transistor model is developed for simulation of digital and analog VLSI circuits in advanced submicron technologies. A compact parameter set is carefully selected to accurately characterize transistors and achieve continuity of the drain current and its derivatives across the different regions of operation. Several submicron modeling techniques are described. Simulated results agree well with measured data of transistors from two industrial technologies. © 1994 IEEE.