Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Bourdon gauge pressure measurements of samples of GeCl4(g) and GeC14(g) plus Ge(s) have been made in the temperature range 300°1300°K The pressure change of pure GeCl4 as a function of temperature indicates that it does not dissociate up to 1300° The pressure vs. temperature behavior of GeCl4 (g) plus Ge (s) is described by the equilibrium [formula ommited> The standard enthalpy, ΔH°, and entropy, ΔS°, of reaction at 723°K were found to be 34.9 kcal and 46.7 eu, respectively. © 1965, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990