J.C. Tsang, J.R. Kirtley, et al.
Physical Review Letters
Paper
Backside optical emission diagnostics for excess IDDQ
Abstract
Backside optical emission was used to diagnose excess quiescent current in a multimillion gate microprocessor. Emission images showed the current was due to FET's improperly set in a conducting state. The utility of backside optical emission for IC diagnostics is discussed, and requirements for optical detectors and sample preparation are considered.
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