P.C. Pattnaik, D.M. Newns
Physical Review B
The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow (1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at ∼ 170 C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be ∼ 80 C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride. © 2013 Elsevier B.V. All Rights Reserved.
P.C. Pattnaik, D.M. Newns
Physical Review B
Ellen J. Yoffa, David Adler
Physical Review B
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SPIE Advanced Lithography 2007
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SPIE Advanced Lithography 2010