Anomalous large grains in alloyed aluminum thin films II. Electromigration and diffusion in thin films with very large grains

Abstract

Grain-sizes of more than a millimeter have been achieved in alloyed Al thin films on amorphous SiO2 surfaces, through anomalous or secondary grain growth. Conductors fabricated from these films exhibit extremely long electromigration failure times in comparison to the normal polycrystalline conductors. Analysis of mass transport data during electromigration indicates that lattice diffusion is the dominant transport process in these conductors, with activation energies of 1.22 eV and 1.20 eV for Al transport and Cu transport, respectively. © 1973.