Conference paper
A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
A W-band Dicke-radiometer RFIC featuring an on-chip integrated analog read-out back-end optimized for power (75 mW) and area efficiency (0.32 mm2). The RFIC is and realized in a standard IBM8HP 0.13um SiGe BiCMOS process. Initial characterization yields an NEP derived 3-dB system bandwidth of 15 GHz (centered at 92 GHz) with the measured average NEP of 37 fW/√Hz. For 30 msec frame-time this is equivalent to NETD of 0.78 K.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Roee Ben Yishay, Danny Elad
IRMMW-THz 2016
Jakob Vovnoboy, Run Levinger, et al.
COMCAS 2015