Design principles of a word selection and drive scheme for a 20-ns nondestructive-READ-cycle-time flat-film memory with 150 000 bits storage capacity, are presented and verified by cross-sectional tests. The word lines are matched at one end and driven from the other by a high-speed driver building block compatible with integrated circuit technology which is connected to a decode matrix. Suitable decode matrix line drivers for providing pulses of different width and amplitude for read operations up to 50 MHz and WRITE operations up to 20 MHz, respectively, are described. Experiments with a cross-sectional setup for 64 outputs prove the feasibility of the system. Its operation in connection with a memory model indicates an access time of 30 ns. Copyright © 1967 by The Institute of Electrical and Electronics Engineers, Inc.