Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We have investigated the adsorption and reaction of PH3 on Si(111)-(7×7) between 100 and 900 K. The topology, electronic structure, and chemical reactivity of the resulting P-doped surface was studied by ultraviolet photoemission spectroscopy, low-energy electron diffraction, and ion-scattering spectroscopy. The P-doped surface has a P(111)-(1×1) structure where P substitutes for the first Si-layer atoms of the Si(111) surface. This surface has no dangling bonds and is chemically inert. © 1991 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials