A new technology for the deposition and promotion of adherence of copper films to aluminum oxide substrates is presented. The method makes use of a gradual change in structure and chemical bonding between the metal film and oxide substrate. The adhesion is enhanced by the formation of the compound CuAl2O4 incorporating both the oxide substrate and the oxide of the metal film in its crystal structure. This method is superior to existing technology and ensures the attainment of the bulk resistivity of copper in the films. © 1976.